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Point defect balance in epitaxial GaSb

N. Segercrantz ; J. Slotte ; I. Makkonen ; J. Kujala ; F. Tuomisto ; Y. Song ; Shumin Wang (Institutionen för mikroteknologi och nanovetenskap, Fotonik)
Applied Physics Letters (0003-6951). Vol. 105 (2014), p. art. no. 082113.
[Artikel, refereegranskad vetenskaplig]

Positron annihilation spectroscopy in both conventional and coincidence Doppler broadening mode is used for studying the effect of growth conditions on the point defect balance in GaSb:Bi epitaxial layers grown by molecular beam epitaxy. Positron annihilation characteristics in GaSb are also calculated using density functional theory and compared to experimental results. We conclude that while the main positron trapping defect in bulk samples is the Ga antisite, the Ga vacancy is the most prominent trap in the samples grown by molecular beam epitaxy. The results suggest that the p–type conductivity is caused by different defects in GaSb grown with different methods.

Denna post skapades 2014-10-03. Senast ändrad 2015-03-10.
CPL Pubid: 203699


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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Fotonik


Elektroteknik och elektronik

Chalmers infrastruktur