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Antenna-integrated 0.6 THz FET direct detectors based on CVD graphene

Audrey Zak (Institutionen för mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik ) ; Michael Andersson (Institutionen för mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik ) ; Maris Bauer ; Jonas Matukas ; Alvydas Lisauskas ; Hartmut Roskos ; Jan Stake (Institutionen för mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik )
Nano letters (1530-6984). Vol. 14 (2014), 10, p. 5834-5838.
[Artikel, refereegranskad vetenskaplig]

We present terahertz (THz) detectors based on top-gated graphene field effect transistors (GFETs) with integrated split-bow-tie antennas. The GFETs were fabricated using graphene grown by chemical vapor deposition (CVD). The THz detectors are capable of room-temperature rectification of a 0.6 THz signal and achieve a maximum optical responsivity better than 14 V/W and minimum optical noise-equivalent power (NEP) of 515 pW/Hz^0.5. Our results are a significant improvement over previous work on graphene direct detectors and are comparable to other established direct detector technologies. This is the first time room-temperature direct detection has been demonstrated using CVD graphene, which introduces the potential for scalable, wafer-level production of graphene detectors.

Nyckelord: Graphene field effect transistors, direct terahertz detection, CVD graphene, antenna-integrated detectors



Denna post skapades 2014-09-10. Senast ändrad 2016-04-28.
CPL Pubid: 202575

 

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