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Visualisation of edge effects in side-gated graphene nanodevices

V. Panchal ; Arseniy Lartsev (Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik) ; A. Manzin ; R. Yakimova ; A. Tzalenchuk ; O. Kazakova
Scientific Reports (2045-2322). Vol. 4 (2014),
[Artikel, refereegranskad vetenskaplig]

Using local scanning electrical techniques we study edge effects in side-gated Hall bar nanodevices made of epitaxial graphene. We demonstrate that lithographically defined edges of the graphene channel exhibit hole conduction within the narrow band of similar to 60-125 nm width, whereas the bulk of the material is electron doped. The effect is the most pronounced when the influence of atmospheric contamination is minimal. We also show that the electronic properties at the edges can be precisely tuned from hole to electron conduction by using moderate strength electrical fields created by side-gates. However, the central part of the channel remains relatively unaffected by the side-gates and retains the bulk properties of graphene.

Article Number: 5881

Denna post skapades 2014-08-29. Senast ändrad 2014-09-04.
CPL Pubid: 202099


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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik


Subatomär fysik

Chalmers infrastruktur