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Wideband and efficient watt-level SiGe BiCMOS switching mode power amplifier using continuous class-E modes theory

Mustafa Özen (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; M.C. Acar ; M.P. Van Der Heijden ; M. Apostolidou ; D.M.W. Leenaerts ; R.F.F. Jos ; Christian Fager (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik)
Digest of Papers - 2014 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2014; Tampa Bay, FL; United States; 1 June 2014 through 3 June 2014 (1529-2517). p. 243-246. (2014)
[Konferensbidrag, refereegranskat]

In this paper, a generic, wide-band switch mode power amplifier (SMPA) design approach is developed based on the continuous class-E modes theory. A watt level, 1.3-2.2 GHz SiGe BiCMOS class-E SMPA is realized for experimental verification. The prototype provides collector efficiencies higher than 70% and output power levels higher than 29 dBm across 1.3-2.2 GHz band, fully confirming the validity of the proposed design approach.

Nyckelord: class-e , CMOS , efficiency , SiGe , wideband

Article number 6851709

Denna post skapades 2014-08-21. Senast ändrad 2015-12-17.
CPL Pubid: 201781


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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik



Chalmers infrastruktur