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RBS channeling measurement of damage annealing in InAs/AlSb HEMT structures

A. Hallen ; Giuseppe Moschetti (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik)
Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms (0168-583X). Vol. 332 (2014), p. 172-175.
[Artikel, refereegranskad vetenskaplig]

Electrical isolation of InAs/AlSb high electron mobility transistors has been achieved by the ion implantation isolation technique. The multilayered structures are grown by molecular beam epitaxy on GaAs substrates. The optimal isolation is provided by damaging patterned areas by 100 keV Ar ions implanted at room temperature using fluence of 2 x 10(15) cm(-2), and then annealing the samples in 365 degrees C for 30 min. The damage build-up and annealing is studied by channeling Rutherford backscattering spectrometry (RBS) and compared to sheet resistance measurements. Only a low level of damage annealing can be seen in RBS for the post-implant annealed samples, but for Ar fluence higher than 2 x 10(14) cm(-2), a strong electrical resistivity increase can still be achieved.

Denna post skapades 2014-08-19.
CPL Pubid: 201615


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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik



Chalmers infrastruktur