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A 80-95 GHz direct quadrature modulator in SiGe technology

Morteza Abbasi (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Sona Carpenter (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Herbert Zirath (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; F. Dielacher
SiRF 2014 - 2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems p. 56-58. (2014)
[Konferensbidrag, refereegranskat]

A direct carrier IQ modulator operating in the 80-95 GHz frequency range is presented. The circuit is designed and fabricated in 0.18μm SiGe technology with 170/250 GHz fT/fmax. The modulator is based on double-balanced gilbert mixer cells with on-chip quadrature LO phase shifter and consumes 23mW DC power. In single-sideband operation, the chip exhibits up to 3 dB conversion gain below 85 GHz and -1± 0.5 dB up to 95 GHz. The image rejection ratio and LO-RF isolation are as high as 25 dB and 43 dB respectively. The modulator can operate with 10 GHz of modulation bandwidth and delivers -7 dBm power in saturation. For demonstration, the circuit is tested and shown to be capable of transmitting 4Gbps BPSK signal with NRZ rectangular pulses. The active chip area is 480μm× 260μm. © 2014 IEEE.

Nyckelord: Gilbert cell mixer , Millimeter-wave , Quadrature modulator , SiGe Bipolar Transistor , W-band



Denna post skapades 2014-07-28. Senast ändrad 2016-06-30.
CPL Pubid: 200738

 

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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik

Ämnesområden

Nanoteknik

Chalmers infrastruktur