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InPBi Single Crystals Grown by Molecular Beam Epitaxy

K. Wang ; Y. Gu ; H. F. Zhou ; L. Y. Zhang ; C. Z. Kang ; M. J. Wu ; W. W. Pan ; P. F. Lu ; Q. Gong ; Shumin Wang (Institutionen för mikroteknologi och nanovetenskap, Fotonik)
Scientific Reports (2045-2322). Vol. 4 (2014),
[Artikel, refereegranskad vetenskaplig]

InPBi was predicted to be the most robust infrared optoelectronic material but also the most difficult to synthesize within In-VBi (V 5 P, As and Sb) 25 years ago. We report the first successful growth of InPBi single crystals with Bi concentration far beyond the doping level by gas source molecular beam epitaxy. The InPBi thin films reveal excellent surface, structural and optical qualities making it a promising new III-V compound family member for heterostructures. The Bi concentration is found to be 2.4 +/- 0.4% with 94 +/- 5% Bi atoms at substitutional sites. Optical absorption indicates a band gap of 1.23 eV at room temperature while photoluminescence shows unexpectedly strong and broad light emission at 1.4-2.7 mmwhich can't be explained by the existing theory.

Nyckelord: ABSORPTION, BISMUTH, BI, PHOSPHIDE, EMISSION, ALLOYS, GAASN, GAP, Multidisciplinary Sciences, AN PJ, 1971, SOLID STATE COMMUNICATIONS, V9, P1555



Denna post skapades 2014-07-24. Senast ändrad 2014-08-21.
CPL Pubid: 200690

 

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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Fotonik

Ämnesområden

Nanoteknik

Chalmers infrastruktur