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Small-Versus Large-Signal Extraction of Charge Models of Microwave FETs

G. Avolio ; A. Raffo ; Iltcho Angelov (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; G. Crupi ; A. Caddemi ; G. Vannini ; Dmmp Schreurs
Ieee Microwave and Wireless Components Letters (1531-1309). Vol. 24 (2014), 6, p. 394-396.
[Artikel, refereegranskad vetenskaplig]

In this letter we extract the parameters of the charge equations of a microwave transistor nonlinear model which is available in commercial CAD tools. In particular, the charge model parameters are extracted starting from small- and large-signal measurements. A better accuracy can be achieved when using large-signal measurements since the model parameters are obtained from experimental data which better reproduce the actual operating condition of the device under test. An advanced 0.15 x 300 mu m(2) pHEMT in GaAs technology, aimed at cold-FET mixer design, is considered as case study.

Nyckelord: Microwave device modeling, nonlinear device modeling, nonlinear measurements, Engineering, Electrical & Electronic

Denna post skapades 2014-07-08.
CPL Pubid: 200278


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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik



Chalmers infrastruktur