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Carrier Mobility as a Function of Temperature in as-Grown and H-intercalated Epitaxial Graphenes on 4H-SiC

Michael Winters (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; E. B. Thorsteinsson ; E. O. Sveinbjornsson ; H. P. Gislason ; J. Hassan ; E. Janzen ; Niklas Rorsman (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik)
Materials Science Forum: Silicon Carbide and Related Materials 2013, Pts 1 and 2. 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), Miyazaki, JAPAN, SEP 29-OCT 04, 2013 (0255-5476). Vol. 778-780 (2014), p. 1146-1149.
[Konferensbidrag, refereegranskat]

The carrier velocity is measured as a function of electric field in as-grown and H-intercalaed epitaxial graphene grown on semi-insulating 4H-SiC in order to estimate the low field carrier mobility as a function of temperature. The mobility is also measured on the same samples as a function of temperature in a liquid Helium (He) cooled cryostat. The two temperature dependent measurements are compared in order to deduce the dominant carrier scattering mechanisms in both materials. In as-grown material, acoustic phonon scattering and impurity scattering both contribute, while impurity scattering dominates in H-intercalated material.

Nyckelord: Graphene, SiC, epitaxial growth, electron transport, carrier density, mobility, scattering

Denna post skapades 2014-07-04. Senast ändrad 2015-07-28.
CPL Pubid: 200218


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Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik



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