CPL - Chalmers Publication Library
| Utbildning | Forskning | Styrkeområden | Om Chalmers | In English In English Ej inloggad.

Intrinsically switchable thin film bulk acoustic wave resonators

Andrei Vorobiev (Institutionen för mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik ) ; Spartak Gevorgian (Institutionen för mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik )
Applied Physics Letters (0003-6951). Vol. 104 (2014), 22, p. Art. no. 222905.
[Artikel, refereegranskad vetenskaplig]

The concept of the frequency switching in the composite bulk acoustic wave (BAW) resonators based on the thin films of paraelectric phase ferroelectrics is demonstrated experimentally. The composite BAW resonators based on the Ba0.25Sr0.75TiO3/SrRuO3/Ba0.25Sr0.75TiO3 multilayer structure are fabricated and characterized. It is shown that the resonance frequency of the BAW resonators can be switched more than two times (from 3.6GHz to 7.7 GHz) by changing polarity of the 5V dc bias voltage at one of the ferroelectric layers. The composite BAW resonators performance is analyzed using the theory of the dc field induced piezoelectric effect in the paraelectric phase ferroelectrics.



Denna post skapades 2014-06-19. Senast ändrad 2015-06-16.
CPL Pubid: 199412

 

Läs direkt!

Lokal fulltext (fritt tillgänglig)

Länk till annan sajt (kan kräva inloggning)




Projekt

Denna publikation är ett resultat av följande projekt:


Switchable and tunable composite film bulk acoustic wave resonators (CompFBAR) (VR//2011-4203)