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Electronic and optical properties of InGaAs/GaAs quantum dots with tunable aspect-ratio

P. F. Lu ; X. X. Zhong ; C. Sun ; Z. Y. Yu ; L. H. Han ; Shumin Wang (Institutionen för mikroteknologi och nanovetenskap, Fotonik)
Modern Physics Letters B (0217-9849). Vol. 28 (2014), 9,
[Artikel, refereegranskad vetenskaplig]

In this paper, a combined approach of finite element method (FEM) and quadratic programming optimization method is proposed to investigate the nonuniform equilibrium composition profile of InGaAs/GaAs quantum dots (QDs) in the framework of Gibbs energy optimization (GEO). The proposed QDs are varied with aspect ratio from 0.3 to 0.5. The wave functions of electron and heavy hole are predicted by using the k . p method. The changes of wave functions before and after optimization can be observed by using composition optimization. Both the eigenvalues and transition energy change obviously with the increasing aspect ratio. The linear optical absorption coefficients corresponding to the interband ground state transition are obtained via the density matrix approach and perturbation expansion method. The numerical results reveal that the aspect ratio and composition profile play significant roles in determining the electronic and optical properties.

Nyckelord: InGaAs/GaAs QDs, electronic and optical structure, nonuniform composition, finite element method, NANOCRYSTALS, MICROSCOPY, SURFACE, GROWTH

Denna post skapades 2014-06-13.
CPL Pubid: 199172


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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Fotonik


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Chalmers infrastruktur