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Electric field effects on spin accumulation in Nb-doped SrTiO3 using tunable spin injection contacts at room temperature

Saroj Prasad Dash (Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik) ; A. M. Kamerbeek ; E. K. de Vries ; André Dankert (Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik) ; B. J. van Wees ; T Banerjee
Applied Physics Letters (0003-6951). Vol. 104 (2014), 21,
[Artikel, refereegranskad vetenskaplig]

We report on features in charge transport and spin injection in an oxide semiconductor, Nb-doped SrTiO3. This is demonstrated using electrically tunable spin injection contacts which exploit the large electric field at the interface and its interplay with the relative permittivity of the semiconductor. We realize spin accumulation in Nb-doped SrTiO3 which displays a unique dependence of the spin lifetime with bias polarity. These findings suggest a strong influence of the interface electric field on the charge transport as well as on spin accumulation unlike in conventional semiconductors and opens up promising avenues in oxide spintronics.


Article Number: 212106



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Denna post skapades 2014-05-30. Senast ändrad 2017-10-03.
CPL Pubid: 198716

 

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