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A novel semiconductor compatible path for nano-graphene synthesis using CBr4 precursor and Ga catalyst

Shumin Wang (Institutionen för mikroteknologi och nanovetenskap, Fotonik) ; Q. Gong ; Y. Y. Li ; C. F. Cao ; H. F. Zhou ; J. Y. Yan ; Q. B. Liu ; L. Y. Zhang ; G. Q. Ding ; Z. F. Di ; X. M. Xie
Scientific Reports (2045-2322). Vol. 4 (2014),
[Artikel, refereegranskad vetenskaplig]

We propose a novel semiconductor compatible path for nano-graphene synthesis using precursors containing C-Br bonding and liquid catalyst. The unique combination of CBr4 as precursor and Ga as catalyst leads to efficient C precipitation at a synthesis temperature of 200 degrees C or lower. The non-wetting nature of liquid Ga on tested substrates limits nano-scale graphene to form on Ga droplets and substrate surfaces at low synthesis temperatures of T <= 450 degrees C and at droplet/substrate interfaces by C diffusion via droplet edges when T >= 400 degrees C. Good quality interface nano-graphene is demonstrated and the quality can be further improved by optimization of synthesis conditions and proper selection of substrate type and orientation. The proposed method provides a scalable and transfer-free route to synthesize graphene/semiconductor heterostructures, graphene quantum dots as well as patterned graphene nano-structures at a medium temperature range of 400-700 degrees C suitable for most important elementary and compound semiconductors.


Denna post skapades 2014-05-15. Senast ändrad 2014-08-19.
CPL Pubid: 198082


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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Fotonik



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