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Vanadium doping on magnetic properties of H-passivated ZnO nanowires

P. F. Lu ; X. L. Zhang ; H. W. Cao ; Z. Y. Yu ; N. N. Cai ; T. Gao ; Shumin Wang (Institutionen för mikroteknologi och nanovetenskap, Fotonik)
Journal of Materials Science (0022-2461). Vol. 49 (2014), 8, p. 3177-3182.
[Artikel, refereegranskad vetenskaplig]

A comprehensive theoretical investigation on the electronic and magnetic properties of V-doped and H-passivated ZnO nanowires (NWs) was performed using spin-polarized density functional theory. The magnetic couplings of six configurations of V-doped ZnO NWs are studied in detail and stable ferromagnetism (FM) ordering is found in certain configurations. The FM mechanism originated from the strong hybridization of V 3d and O 2p around the Fermi level. Our results show that the uniaxial strain is an effective method to tune the magnetic properties of this material system. Room temperature ferromagnetism in these V-doped ZnO NWs indicates that these materials have a promising application in nanoscale spintronics.

Nyckelord: THIN-FILMS, EPITAXIAL-GROWTH, ZINC-OXIDE, 1ST-PRINCIPLES, SEMICONDUCTORS, DESIGN



Denna post skapades 2014-03-21.
CPL Pubid: 195366

 

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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Fotonik

Ämnesområden

Fysik

Chalmers infrastruktur