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Wafer-scale graphene synthesis, transfer and FETs

K.B.K.T. Teo ; B. You ; N.L. Rupesinghe ; A. Newham ; P. Greenwood ; S. Buttress ; M.T. Cole ; L. Tao ; J. Lee ; D. Akinwande ; K. Celebi ; H. Park ; Jie Sun (Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik)
Proceedings of the IEEE Conference on Nanotechnology (1944-9399). p. 1200-1203. (2013)
[Konferensbidrag, refereegranskat]

Growth and characterization of graphene grown using copper foils as well as copper films on silicon dioxide on silicon substrates were performed. Kinetics of growth and effective activation energy for the graphene synthesis will be discussed for the surface catalytic synthesis of graphene. Conditions for large-scale synthesis of monolayer graphene will be addressed in this talk. Wafer-scale graphene transfer and electrical results will be presented. Based on our preliminary results from capped 100mm wafer scale graphene transistors, we expect a mobility of 4-6 k cm2/Vs with symmetry hole/electron transport. Key considerations and challenges for scaling are discussed and results for graphene growth on the 300mm wafer scale will be discussed.

Nyckelord: graphene, surface catalytic synthesis, semiconductor thin films

Denna post skapades 2014-03-18.
CPL Pubid: 195181


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