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Hybrid measurement-based extraction of consistent large-signal models for microwave FETs

Iltcho Angelov (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik ; GigaHertz Centrum) ; Mattias Thorsell (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik ; GigaHertz Centrum) ; Dan Kuylenstierna (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik ; GigaHertz Centrum) ; G. Avolio ; D. Schreurs ; A. Raffo ; G. Vannini
43rd European Microwave Conference, EuMC 2013 - Held as Part of the 16th European Microwave Week, EuMW 2013; Nuremberg; Germany; 7 October 2013 through 10 October 2013 p. 267-270. (2013)
[Konferensbidrag, refereegranskat]

This paper discusses a procedure to extract large-signal models for microwave transistors. By using experimental data, which not necessarily reflect the actual operating conditions, accurate large-signal models, suitable for CAD tools and working at high frequencies, can be obtained by combining direct extraction of basic parameters and numerical optimization. The idea consists of linking the model parameters directly to experimental data. In this way the extraction procedure is sped up. Examples of large-signal models for GaAs and GaN transistors are reported.

Nyckelord: large-signal models; microvawe transitors; nonlinear measurements


Article number 06686642.



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Denna post skapades 2014-02-27. Senast ändrad 2015-02-23.
CPL Pubid: 194254