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A novel technique for GaN HEMT trap states characterisation

P. Wright ; Mattias Thorsell (GigaHertz Centrum ; Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik)
Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC (2013)
[Konferensbidrag, refereegranskat]

A newly investigated measurement approach to analysing the effects of long-term memory effects in wide band-gap semiconductor radio-frequency (RF) transistors is presented. This approach utilises a combination of hybrid-active load-pull and time-domain waveform measurement analysis, whilst adopting a novel measurement technique for initiating charge trapping-based transients in a gallium nitride (GaN) HEMT transistor. Switching actively between two load impedances with theoretically common power amplifier (PA) performance characteristics, a step function in the dynamic drain-voltage (vd) is initiated, whilst minimising gate-voltage and average drain-current variation. In isolating the step function to the drain side of the device only it is possible to extract dependencies of the RF drain-voltage on trap states in the transistor such as those that may occur when subjected to dynamic traffic in in-the-field applications. The measurement technique has shown the potential for extracting both time-constant and charge-trapping magnitude parameters for comparison with traditional pulse-IV characterisations for the purpose of modelling memory in GaN transistors.

2013 35th IEEE Compound Semiconductor Integrated Circuit Symposium: Integrated Circuits in GaAs, InP, SiGe, GaN and Other Compound Semiconductors, CSICS 2013; Monterey, CA; United States; 13 October 2013 through 16 October 2013

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Denna post skapades 2014-02-18. Senast ändrad 2014-09-02.
CPL Pubid: 193911


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