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Multiplicative and Additive Low-Frequency Noise in Microwave Transistors

S. Weinreb ; Joel Schleeh (GigaHertz Centrum)
Ieee Transactions on Microwave Theory and Techniques (0018-9480). Vol. 62 (2014), 1, p. 83-91.
[Artikel, refereegranskad vetenskaplig]

The additive noise (i.e., noise figure) in the 1-Hz-1-GHz range and multiplicative noise (i.e., gain fluctuations) in the 1-Hz-100-kHz range have been measured for six different types of high electron mobility transistors and two heterojunction bipolar transistors. The instrumentation enables measurement of multiplicative noise as small as 10(-6) (1 ppm). Measurements were performed at 300 and 22 K and results are discussed with regard to transistor technology, coupling of additive and multiplicative effects, and bias circuit dependence. The results are applied to radiometers and the degradation in performance due to the gain fluctuation is presented.

Nyckelord: Gain fluctuations, high electron-mobility transistor (HEMT), noise, 1/f, radiometers, transistors, GAIN FLUCTUATIONS, WIDE-BAND, AMPLIFIERS, STABILITY, HEMTS



Denna post skapades 2014-02-06. Senast ändrad 2014-02-10.
CPL Pubid: 193541

 

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Institutioner (Chalmers)

GigaHertz Centrum

Ämnesområden

Elektroteknik och elektronik

Chalmers infrastruktur