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Transformer-Based Broadband High-Linearity HBT Gm-Boosted Transconductance Mixers

Jian Zhang (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; M. Q. Bao ; Dan Kuylenstierna (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Sz-Hau Lai (GigaHertz Centrum) ; Herbert Zirath (GigaHertz Centrum)
Ieee Transactions on Microwave Theory and Techniques (0018-9480). Vol. 62 (2014), 1, p. 92-99.
[Artikel, refereegranskad vetenskaplig]

A Gm-boosted transconductance configuration mixer is proposed. Based on this topology, two broadband monolithic InGaP HBT mixers, one single device and one balanced, have been developed for C-Ku-band applications. The single device mixer has a conversion gain of 4.5 +/- 1.5 dB within the RF frequency range from 5 to 17 GHz. The balanced design has about 3.5 +/- 1.5-dB conversion gain within a frequency range of 6-18 GHz. The two mixers have very good linearity with a third-order intermodulation intercept point (IIP3) higher than 16 and 20 dBm for the single device mixer and single balanced mixer, respectively. Both mixers are pumped by a local oscillator power of 5 dBm. To the authors' best knowledge, the designed mixers demonstrate the highest IIP3 with positive conversion gain in this frequency range. Compact designs are achieved with chip sizes less than 0.5 mm(2). DC power consumptions are 30 and 50 mW, for the single device and single balanced mixer, respectively.

Nyckelord: Gm-boosted, InGaP HBT, transconductance mixer, transformer balun, CMOS, INTERMODULATION, MICROMIXER, DESIGN, BALUN, OCESSING, V44, P428

Denna post skapades 2014-02-06. Senast ändrad 2015-08-10.
CPL Pubid: 193527


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