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Practical and Fundamental Impact of Epitaxial Graphene on Quantum Metrology

Tjbm Janssen ; A. Tzalenchuk ; S. Lara-Avila ; Sergey Kubatkin (Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik) ; V. Fal'ko
Mapan-Journal of Metrology Society of India (0970-3950). Vol. 28 (2013), 4, p. 239-250.
[Artikel, refereegranskad vetenskaplig]

The discovery 8 years ago of the quantum Hall effect (QHE) in graphene sparked an immediate interest in the metrological community. Here was a material which was completely different from commonly used semiconductor systems and which seemed to have some uniques properties which could make it ideally suited for high-precision resistance metrology. However, measuring the QHE in graphene turned out to be not so simple as first thought. In particular the small size of exfoliated graphene samples made precision measurements difficult. This dramatically changed with the development of large-area graphene grown on SiC and in this short review paper we discuss the journey from first observation to the highest-ever precision comparison of the QHE.

Nyckelord: Graphene, quantum Hall effect, Metrology, SI, Epitaxial graphene, QUANTIZED HALL RESISTANCE, GALLIUM-ARSENIDE, CAPACITANCE, STANDARD, GAS

Denna post skapades 2014-02-04.
CPL Pubid: 193424


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Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik



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