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Mobility enhancement in tensile-strained Ge grown on InAlP metamorphic templates

K. Wang ; Q. Gong ; H. F. Zhou ; C. Z. Kang ; J. Y. Yan ; Q. B. Liu ; Shumin Wang (Institutionen för mikroteknologi och nanovetenskap, Fotonik)
Applied Surface Science (0169-4332). Vol. 291 (2014), p. 45-47.
[Artikel, refereegranskad vetenskaplig]

We investigated the growth of tensile-strained Ge on InAlP metamorphic templates by gas source molecular beam epitaxy. Good control of biaxial tensile strain in the Ge layer was demonstrated in the range of 0.5-2.0% by adjusting the In content of the metamorphic template. It was found that the growth of Ge was layer-by-layer (2D) even under high tensile strain of 2.0%, resulting in a smooth surface with roughness less than 1.5 nm. Hall results showed that the electron mobility of Ge increased monotonically with tensile strain.

Nyckelord: Mobility enhancement, Tensile-strained Ge, InAlP, Gas source molecular, beam epitaxya, MOSFET



Denna post skapades 2014-02-04.
CPL Pubid: 193405

 

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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Fotonik

Ämnesområden

Fysik

Chalmers infrastruktur