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Nanoelectronic devices in InGaAs/inP based on ballistic and quantum effects

Jie Sun (Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik)
Saarbrucken, Germany : VDM Verlag, 2009. ISBN: 978-3639206685.- 84 s.

As current silicon-based microelectronic devices and circuits are approaching their fundamental limits, the research field of nanoelectronics is emerging worldwide. Materials other than silicon and device principles other than complementary metal-oxide-semiconductor (CMOS) are being investigated. With this background, the present book focuses on nanoelectronic devices in InGaAs/InP based on ballistic and quantum effects. The main material studied was a modulation doped InGaAs/InP two-dimensional electron gas. The book covers mainly three types of devices and their twofold integration: in-plane gate transistors, three-terminal ballistic junctions and quantum dots. Novel device properties were studied in detail. The author hopes the results presented in this book to be a valuable contribution to the nanoelectronic research on InP-based semiconductors. The book should be interesting to semiconductor material scientists, device physicists and electronic engineers.

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Denna post skapades 2014-01-28. Senast ändrad 2016-10-27.
CPL Pubid: 193192