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Structural and optical characterizations of InPBi thin films grown by molecular beam epitaxy

Y. Gu ; K. Wang ; H. Zhou ; Y. Li ; C. Cao ; L. Zhang ; Y. Zhang ; Q. Gong ; Shumin Wang (Institutionen för mikroteknologi och nanovetenskap, Fotonik)
Nanoscale Research Letters (1931-7573). Vol. 9 (2014), 24,
[Artikel, refereegranskad vetenskaplig]

InPBi thin films have been grown on InP by gas source molecular beam epitaxy. A maximum Bi composition of 2.4% is determined by Rutherford backscattering spectrometry. X-ray diffraction measurements show good structural quality for Bi composition up to 1.4% and a partially relaxed structure for higher Bi contents. The bandgap was measured by optical absorption, and the bandgap reduction caused by the Bi incorporation was estimated to be about 56 meV/Bi%. Strong and broad photoluminescence signals were observed at room temperature for samples with xBi < 2.4%. The PL peak position varies from 1.4 to 1.9 μm, far below the measured InPBi bandgap.

Nyckelord: InPBi, HRXRD, Absorption, Photoluminescence, Molecular beam epitaxy

Denna post skapades 2014-01-27. Senast ändrad 2015-04-20.
CPL Pubid: 193097


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Institutionen för mikroteknologi och nanovetenskap, Fotonik



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