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Behavioral modeling of outphasing amplifiers considering memory effects

Per N. Landin (GigaHertz Centrum ; Institutionen för signaler och system, Kommunikationssystem) ; Jonas Fritzin ; Thomas Eriksson (GigaHertz Centrum ; Institutionen för signaler och system, Kommunikationssystem) ; Atila Alvandpour
Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International (0149-645X). p. 1-4. (2013)
[Konferensbidrag, refereegranskat]

This paper proposes a behavioral model structure for outphasing amplifiers. The model performance is evaluated on a class-D CMOS outphasing amplifier and compared with two models found in the literature. The proposed model structure also allows the use of memory in a parallel Hammerstein-like setting. The proposed models show improvements in adjacent channel error power ratio (ACEPR) of approximately 5 dB in addition to being linear in the parameters. The lower model errors enable the use and design of improved predistorters taking frequency dependency (memory effects) in outphasing amplifiers into account.

Nyckelord: CMOS, Power amplifier, nonlinear distortion, predistortion



Denna post skapades 2014-01-17. Senast ändrad 2016-02-01.
CPL Pubid: 192752

 

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Institutioner (Chalmers)

GigaHertz Centrum
Institutionen för signaler och system, Kommunikationssystem

Ämnesområden

Signalbehandling
Elektronik

Chalmers infrastruktur