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Strain induced composition profile in InGaN/GaN core-shell nanowires

Pengfei Lu ; Chao Sun ; Huawei Cao ; Han Ye ; Xuxia Zhong ; Zhongyuan Yu ; Lihong Han ; Shumin Wang (Institutionen för mikroteknologi och nanovetenskap, Fotonik)
Solid State Communications (0038-1098). Vol. 178 (2013), p. 1.
[Artikel, refereegranskad vetenskaplig]

A theoretical investigation on explanation of the composition profile in triangular and hexagonal cross-sections of InGaN/GaN core-shell nanowires is presented by combining the finite elements method (FEM) and method of moving asymptotes (MMA) in the framework of thermodynamics. Our models can account for strain effect on indium composition. In both models, the maximum indium content through segregation arises either at the side length or at the corner of the InGaN shell. The simulated results are found in good agreement with those of experimental data, thus providing a good guidance for the growth of high indium concentration of InGaN/GaN core-shell nanowires.



Denna post skapades 2014-01-15. Senast ändrad 2014-03-24.
CPL Pubid: 192498

 

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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Fotonik

Ämnesområden

Materialteknik

Chalmers infrastruktur