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Novel Dilute Bismides for IR Optoelectronics Applications

Shumin Wang (Institutionen för mikroteknologi och nanovetenskap, Fotonik) ; Yuxin Song (Institutionen för mikroteknologi och nanovetenskap, Fotonik) ; Kai Wang ; Yi Gu ; Huan Zhao (Institutionen för mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik ) ; Xiren Chen ; Hong Ye (Institutionen för mikroteknologi och nanovetenskap, Fotonik) ; Haifei Zhou ; Chuanzheng Kang ; Yaoyao Li ; Cunfang Cao ; Liyao Zhang ; Jun Shao ; Qian Gong ; Yonggang Zhang
Asia Comminication and Photonics Conference (ACP2013), Beijing, China (2162-108X). (2013)
[Konferensbidrag, refereegranskat]

III-V-Bi compounds reveal a number of attractive physical properties promising for novel IR optoelectronic applications [1,2] and have received considerable attention as witnessed by the dedicated international workshops on this topic in the consecutive past four years. The isoelectronic nature of Bi atoms in III-Vs induces strong interactions with the energy bands of host materials leading to large band-gap reduction, less temperature sensitive band-gap and large spin-orbit split band. So far the most studied material is Ga(N)AsBi, while other dilute bismides have also been reported recently. In this paper, we shall briefly review several novel bismides: GaSbBi, InSbiBi, InAsBi, InPBi and InGaAsBi, and the Bi surfactant effect from our group, all grown by molecular beam epitaxy (MBE).

Denna post skapades 2014-01-15. Senast ändrad 2015-10-23.
CPL Pubid: 192490