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GaN nanorod light emitting diodes with suspended graphene transparent electrodes grown by rapid chemical vapor deposition

K. Xu ; C. Xu ; Y. Y. Xie ; J. Deng ; Y. X. Zhu ; W. L. Guo ; M. M. Mao ; M. Xun ; M. X. Chen ; L. Zheng ; Jie Sun (Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik)
Applied Physics Letters (0003-6951). Vol. 103 (2013), 22, p. 5.
[Artikel, refereegranskad vetenskaplig]

Ordered and dense GaN light emitting nanorods are studied with polycrystalline graphene grown by rapid chemical vapor deposition as suspended transparent electrodes. As the substitute of indium tin oxide, the graphene avoids complex processing to fill up the gaps between nanorods and subsequent surface flattening and offers high conductivity to improve the carrier injection. The as-fabricated devices have 32% improvement in light output power compared to conventional planar GaN-graphene diodes. The suspended graphene remains electrically stable up to 300 degrees C in air. The graphene can be obtained at low cost and high efficiency, indicating its high potential in future applications.

Nyckelord: ARRAYS



Denna post skapades 2014-01-10. Senast ändrad 2014-01-30.
CPL Pubid: 192036

 

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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik

Ämnesområden

Fysik

Chalmers infrastruktur