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Shallow traps at the SiO₂/SiC interface

Halldór Örn Ólafsson (Institutionen för mikroelektronik)
Göteborg : Chalmers University of Technology, 2002. - 58 s.

Nyckelord: silicon carbide (SiC), metal-oxide-semiconductor (MOS), interface states, capacitance-voltage (C-V), thermally stimulated current (TSC), deep level transient spectroscopy (DLTS)

Denna post skapades 2013-12-18.
CPL Pubid: 189858


Institutioner (Chalmers)

Institutionen för mikroelektronik (1995-2003)



Chalmers infrastruktur

Ingår i serie

Technical report L - School of Electrical Engineering, Chalmers University of Technology. 446