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InP-based heterostructure field effect transistors and millimeter wave integrated circuits

Anders Mellberg (Institutionen för mikroelektronik)
Göteborg : Chalmers University of Technology, 2002. - xii, 51 s. s.

Nyckelord: indium phosphide, InP, high electron mobility transistor (HEMT), heterostructure field effect transistor (HFET), modulation doped field effect transistor (MODFET), monolithic microwave integrated circuit (MMIC), low noise amplifier, passive components, MIM capacitor, spiral inductor, thin film resistor (TFR), modeling, microstrip transmission line, TL, coplanar waveguides, CPW, III-V semiconductor, compound semiconductor, low noise amplifier, wideband LNA, 2DEG

Denna post skapades 2013-12-18.
CPL Pubid: 189821


Institutioner (Chalmers)

Institutionen för mikroelektronik (1995-2003)



Chalmers infrastruktur

Ingår i serie

Technical report L - School of Electrical and Computer Engineering, Chalmers University of Technology. 449