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High resolution displacement measurement of micromechanical structures : the RDGT

Anke Weinert (Institutionen för mikroelektronik)
Göteborg : Chalmers University of Technology, 2000. ISBN: 993-147161-1.
[Licentiatavhandling]

Nyckelord: Resonant double gate transistor, displacement measure, high resolution, silicon, capacitive detection, low impedance sensing, resonant gate transistor, RGT, RDGT, FET, MOSFET



Denna post skapades 2013-11-27.
CPL Pubid: 187567

 

Institutioner (Chalmers)

Institutionen för mikroelektronik (1995-2003)

Ämnesområden

Elektronik

Chalmers infrastruktur

Ingår i serie

Technical report L - School of Electrical and Computer Engineering, Chalmers University of Technology. 334