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Dilute bismides for near and mid-infrared applications

Yuxin Song (Institutionen för mikroteknologi och nanovetenskap, Fotonik) ; Yi Gu ; Hong Ye (Institutionen för mikroteknologi och nanovetenskap, Fotonik) ; Peixiong Shi ; Anders Hallén ; Xiren Chen ; Jun Shao ; Shumin Wang (Institutionen för mikroteknologi och nanovetenskap, Fotonik)
International Conference on Transparent Optical Networks (2162-7339). (2013)
[Konferensbidrag, refereegranskat]

Dilute bismides are a group of emerging materials with unique properties. Incorporation of a small amount of Bi in common III-V host materials results in large band-gap reduction and strong spin-orbit splitting, leading to potential applications in near-infrared (NIR) and mid-infrared (MIR) optoelectronics. Recent progresses on molecular beam epitaxy (MBE) of novel III-Sb-Bi, i.e. GaSbBi and InSbBi thin films from our group are summarised in this paper. Quantum well structures based on GaSbBi and InGaAsBi aiming for the optical communication window were grown and characterized. © 2013 IEEE.

Nyckelord: dilute bismide, GaSbBi, infrared, InGaAsBi, InSbBi, MBE

Denna post skapades 2013-11-27. Senast ändrad 2016-04-29.
CPL Pubid: 187559


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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Fotonik



Chalmers infrastruktur