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Charge carrier dynamics at the SiO2/SiC interface

Mahdad Sadeghi (Institutionen för mikroelektronik)
Göteborg : Chalmers University of Technology, 1998. ISBN: 91-7197-733-3.- 46 s.

Nyckelord: oxidation of SiC, interface quality, high frequency C-V measurement, SiO2/SiC metal oxide semiconductor (MOS), thermal non-equilibrium, capacitance simulations

Denna post skapades 2013-11-14.
CPL Pubid: 186702


Institutioner (Chalmers)

Institutionen för mikroelektronik (1995-2003)



Chalmers infrastruktur

Ingår i serie

Technical report L - School of Electrical and Computer Engineering, Chalmers University of Technology. 298