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Quantum resistance metrology using graphene

T. J. B. M. Janssen ; Alexander Tzalenchuk ; Samuel Lara-Avila (Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik) ; Sergey Kubatkin (Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik) ; V. I. Fal'ko
Reports on Progress in Physics (0034-4885). Vol. 76 (2013), 10,
[Artikel, refereegranskad vetenskaplig]

In this paper, we review the recent extraordinary progress in the development of a new quantum standard for resistance based on graphene. We discuss the unique properties of this material system relating to resistance metrology and discuss results of the recent highest-ever precision direct comparison of the Hall resistance between graphene and traditional GaAs. We mainly focus our review on graphene expitaxially grown on SiC, a system which so far resulted in the best results. We also briefly discuss progress in the two other graphene material systems, exfoliated graphene and chemical vapour deposition graphene, and make a critical comparison with SiC graphene. Finally, we discuss other possible applications of graphene in metrology.


Article Number: 104501.



Denna post skapades 2013-11-12. Senast ändrad 2015-10-22.
CPL Pubid: 186456

 

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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik

Ämnesområden

Fysik

Chalmers infrastruktur