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A learning tool MOSFET model A stepping-stone from the square-law model to BSIM4

Kjell Jeppson (Institutionen för mikroteknologi och nanovetenskap, Bionanosystem)
23rd International Workshop on Power And Timing Modeling, Optimization and Simulation, PATMOS 2013. Karlsruhe, Deutschland. SEP 09-11, 2013 p. 39-44. (2013)
[Konferensbidrag, refereegranskat]

Students often experience difficulties grasping the gap between simple square-law MOSFET models and advanced BSIM models with a large number of model parameters for modeling the many second-order short-channel effects(SCE). In this paper, a physics-based learning tool MOSFET model is presented with the aim of serving as a stepping-stone between these two models. The model is based on three model parameters in each of the two regions of strong inversion operation. The three-point model parameter extraction scheme is presented to support student learning and hands-on experience. The model is useful both for small-signal parameter calculations in the analog bias region and for calculation of large-signal currents during logic gate transients. Model accuracy is very good, a lot better than first expected, even if geometry variations have not yet been explored.

Nyckelord: MOSFET modeling, velocity saturation, DIBL, mobility roll-off, three-point model parameter extraction



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Denna post skapades 2013-10-22. Senast ändrad 2017-01-27.
CPL Pubid: 185496

 

Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Bionanosystem (2007-2015)

Ämnesområden

Informations- och kommunikationsteknik
Nanoteknik

Chalmers infrastruktur