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**Harvard**

Jeppson, K. (2013) * A learning tool MOSFET model A stepping-stone from the square-law model to BSIM4 *.

** BibTeX **

@conference{

Jeppson2013,

author={Jeppson, Kjell},

title={ A learning tool MOSFET model A stepping-stone from the square-law model to BSIM4 },

booktitle={23rd International Workshop on Power And Timing Modeling, Optimization and Simulation, PATMOS 2013. Karlsruhe, Deutschland. SEP 09-11, 2013},

isbn={978-1-4799-1170-7},

pages={39-44},

abstract={Students often experience difficulties grasping the gap between simple square-law MOSFET models and advanced BSIM models with a large number of model parameters for modeling the many second-order short-channel effects(SCE). In this paper, a physics-based learning tool MOSFET model is presented with the aim of serving as a stepping-stone between these two models. The model is based on three model parameters in each of the two regions of strong inversion operation. The three-point model parameter extraction scheme is presented to support student learning and hands-on experience. The model is useful both for small-signal parameter calculations in the analog bias region and for calculation of large-signal currents during logic gate transients. Model accuracy is very good, a lot better than first expected, even if geometry variations have not yet been explored.},

year={2013},

keywords={MOSFET modeling, velocity saturation, DIBL, mobility roll-off, three-point model parameter extraction},

}

** RefWorks **

RT Conference Proceedings

SR Print

ID 185496

A1 Jeppson, Kjell

T1 A learning tool MOSFET model A stepping-stone from the square-law model to BSIM4

YR 2013

T2 23rd International Workshop on Power And Timing Modeling, Optimization and Simulation, PATMOS 2013. Karlsruhe, Deutschland. SEP 09-11, 2013

SN 978-1-4799-1170-7

SP 39

OP 44

AB Students often experience difficulties grasping the gap between simple square-law MOSFET models and advanced BSIM models with a large number of model parameters for modeling the many second-order short-channel effects(SCE). In this paper, a physics-based learning tool MOSFET model is presented with the aim of serving as a stepping-stone between these two models. The model is based on three model parameters in each of the two regions of strong inversion operation. The three-point model parameter extraction scheme is presented to support student learning and hands-on experience. The model is useful both for small-signal parameter calculations in the analog bias region and for calculation of large-signal currents during logic gate transients. Model accuracy is very good, a lot better than first expected, even if geometry variations have not yet been explored.

LA eng

OL 30