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Three- and Four-Point Hamer-type MOSFET Parameter Extraction Methods Revisited

Kjell Jeppson (Institutionen för mikroteknologi och nanovetenskap, Bionanosystem)
IEEE International Conference on Microelectronic Test Structures (ICMTS 2013) (1071-9032). Osaka, Japan, p. 141-145. (2013)
[Konferensbidrag, refereegranskat]

In this paper the three-point Hamer type and four-point Karlsson & Jeppson type MOSFET parameter extraction methods are revisited concerning robustness and selection of data points. The method for fitting models described by rational functions to measured data proposed by Hamming is also discussed and it is shown how this method calculates its weighted data points. An alternative method where MOSFET resistance values are used instead of current values for the extraction procedure is also investigated in an attempt to increase extraction method robustness. Finally, it is shown how the three point extraction method can be applied not only to the triode region but also to the MOSFET saturation region for separating parameters for the body effect and the velocity saturation



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Denna post skapades 2013-10-22. Senast ändrad 2013-10-29.
CPL Pubid: 185495

 

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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Bionanosystem (2007-2015)

Ämnesområden

Informations- och kommunikationsteknik
Nanoteknik

Chalmers infrastruktur