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Dilute Bismides for Mid-IR Applications

Yuxin Song (Institutionen för mikroteknologi och nanovetenskap, Fotonik) ; Yi Gu ; Jun Shao ; Shumin Wang (Institutionen för mikroteknologi och nanovetenskap, Fotonik)
Bismuth-Containing Compounds p. 1-27. (2013)

Dilute bismides are a group of emerging materials with unique properties. Incorporation of a small amount of Bi in common III–V host materials results in large band-gap reduction and strong spin-orbit splitting, leading to potential applications in mid-infrared (Mid-IR) optoelectronics. In this chapter, we review recent progresses on epitaxy and characterizations of novel bismides, i.e., GaSb1−x Bi x , InSb1 − x Bi x , InAs1 − x Bi x , and InAsSbBi. Although these dilute bismides have been successfully grown, to obtain high Bi incorporations and retain high crystal quality is still very challenging.

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Denna post skapades 2013-10-16.
CPL Pubid: 185308


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