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Controlling the Intrinsic Josephson Junction Number in a Bi2Sr2CaCu2O8+δ Mesa

Li-Xing You (Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik) ; P.-H. Wu ; W.-W. Xu ; Z.-M. Ji ; L. Kang
Japanese Journal of Applied Physics (0021-4922 ). Vol. 43 (2004), 7A, p. 4163-4165.
[Artikel, refereegranskad vetenskaplig]

In fabricating Bi2Sr2CaCu2O8+δ intrinsic Josephson junctions in 4-terminal mesa structures, we modify the conventional fabrication process by markedly reducing the etching rates of argon ion milling. As a result, the junction number in a stack can be controlled quite satisfactorily as long as we carefully adjust those factors such as the etching time and the thickness of the evaporated layers. The error in the junction number is within ±1. By additional ion etching if necessary, we can controllably decrease the junction number to a rather small value, and even a single intrinsic Josephson junction can be produced.

Nyckelord: intrinsic Josephson junctions, junction number, argon ion etching, etching rates, I–V curves



Denna post skapades 2006-08-29. Senast ändrad 2017-10-09.
CPL Pubid: 1851

 

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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik

Ämnesområden

Fysik

Chalmers infrastruktur