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Phase Space for the Breakdown of the Quantum Hall Effect in Epitaxial Graphene

J. A. Alexander-Webber ; A. M. R. Baker ; Tjbm Janssen ; A. Tzalenchuk ; Samuel Lara-Avila (Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik) ; Sergey Kubatkin (Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik) ; R. Yakimova ; B. A. Piot ; D. K. Maude ; R. J. Nicholas
Physical Review Letters (0031-9007). Vol. 111 (2013), 9,
[Artikel, refereegranskad vetenskaplig]

We report the phase space defined by the quantum Hall effect breakdown in polymer gated epitaxial graphene on SiC (SiC/G) as a function of temperature, current, carrier density, and magnetic fields up to 30 T. At 2 K, breakdown currents (I-c) almost 2 orders of magnitude greater than in GaAs devices are observed. The phase boundary of the dissipationless state (rho(xx) = 0) shows a [1 - (T/T-c)(2)] dependence and persists up to T-c > 45 K at 29 T. With magnetic field Ic was found to increase alpha B-3/2 and T-c alpha B-2. As the Fermi energy approaches the Dirac point, the nu = 2 quantized Hall plateau appears continuously from fields as low as 1 T up to at least 19 T due to a strong magnetic field dependence of the carrier density.

Denna post skapades 2013-09-23. Senast ändrad 2015-10-22.
CPL Pubid: 183823


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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik



Chalmers infrastruktur



Denna publikation är ett resultat av följande projekt:

New Electronics Concept: Wafer-Scale Epitaxial Graphene (CONCEPTGRAPHENE) (EC/FP7/257829)