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The band offset and the critical layer thickness in III-V compound semiconductor heterostructures

Shumin Wang (Fysiska institutionen)
Göteborg : Chalmers University of Technology, 1992. ISBN: 991-400113-0.- 16 s. s.

Nyckelord: band offset, critical layer thickness, interface morphology, molecular beam epitaxy, photoluminescence, transmission electron microscopy, quantum wells, heterostructures, strain, InGaAs, III-V compounds

Denna post skapades 2013-08-08. Senast ändrad 2014-01-13.
CPL Pubid: 180922


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