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140-220-GHz DHBT Detectors

Vessen Vassilev (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Herbert Zirath (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Rumen Kozhuharov (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Sz-Hau Lai (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik)
Ieee Transactions on Microwave Theory and Techniques (0018-9480). Vol. 61 (2013), 6, p. 2353-2360.
[Artikel, refereegranskad vetenskaplig]

This paper discusses G-band (140-220 GHz) detectors based on a 250-nm InP-InGaAs-InP double heterojunction bipolar transistor process available from the Teledyne Scientific Company. Two types of detectors are presented-a passive detector where the transistor's base-emitter junction nonlinearity is used, and an active detector, where the transistor transconductance nonlinearity is used for detection. Measurements of transistor noise-power spectrum density at low frequencies is used to model and predict the noise equivalent power (NEP) of the detectors. Analysis of responsivity and noise is presented and compared with measurements. Both configurations are analyzed and compared in terms of noise-voltage, responsivity and NEP. The conclusion that the passive detector offers lower NEP is analyzed and explained.

Nyckelord: Double heterojunction bipolar transistor (DHBT); flicker noise; G-band; InP; monolithic microwave integrated circuit (MIMIC); noise equivalent power (NEP); passive imaging; power detectors; radiometers; receivers; remote sensing; responsivity



Denna post skapades 2013-08-02. Senast ändrad 2015-08-10.
CPL Pubid: 180456

 

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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik

Ämnesområden

Elektroteknik och elektronik

Chalmers infrastruktur