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A DC Comparison Study Between H-Intercalated and Native epigraphenes on SiC substrates

Michael Winters (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Mattias Thorsell (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; J. ul Hassan ; Niklas Rorsman (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; E. Janzen ; Herbert Zirath (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik)
Silicon Carbide and Related Materials 2012 (0255-5476). Vol. 740-742 (2013), p. 129-132.
[Konferensbidrag, refereegranskat]

The aim of this study is to compare DC characteristics of 'as-grown' and hydrogen (H)-intercalated epitaxial graphenes on SiC substrates [1,2]. Epitaxial graphene is grown on SiC at 1400-1600C, and H-intercalation is performed via in-situ introduction of Hydrogen during the graphitization process [5]. The fabrication processing steps used to define test structures are identical for the two materials. Results on the DC behavior and uniformity issues with respect to both materials are reported. The as-grown material behaves as a linear resistance, while H-intercalated demonstrates a non-linear characteristic. Hysteresis effects and time dependent behaviors are also observed in both materials. Extensive Hall measurements are performed on both materials with the aim of providing a qualitative understanding of material uniformity in both epigraphenes.

Nyckelord: Epi-graphene of SiC; uniformity; DC analysis; comparison study; H-Intercalation; graphene fabrication; memory effects

Denna post skapades 2013-07-12. Senast ändrad 2017-03-21.
CPL Pubid: 180130


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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik



Chalmers infrastruktur