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Graphene transparent electrodes grown by rapid chemical vapor deposition with ultrathin indium tin oxide contact layers for GaN light emitting diodes

K. Xu ; C. Xu ; J. Deng ; Y. X. Zhu ; W. L. Guo ; M. M. Mao ; L. Zheng ; Jie Sun (Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik)
Applied Physics Letters (0003-6951). Vol. 102 (2013), 16,
[Artikel, refereegranskad vetenskaplig]

By virtue of the small active volume around Cu catalyst, graphene is synthesized by fast chemical vapor deposition (CVD) in a cold wall vertical system. Despite being highly polycrystalline, it is as conductive and transparent as standard graphene and can be used in light emitting diodes as transparent electrodes. 7-10 nm indium tin oxide (ITO) contact layer is inserted between the graphene and p-GaN to enhance hole injection. Devices with forward voltage and transparency comparable to those using traditional 240 nm ITO are achieved with better ultraviolet performances, hinting the promising future for application-oriented graphene by rapid CVD.

Denna post skapades 2013-06-10. Senast ändrad 2015-04-09.
CPL Pubid: 178122


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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik



Chalmers infrastruktur