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Wafer bonding: A flexible way to manufacture SOI materials for high performance applications

Stefan Bengtsson (Institutionen för mikroteknologi och nanovetenskap, Fasta tillståndets elektronik) ; Petra Amirfeiz (Institutionen för mikroteknologi och nanovetenskap, Fasta tillståndets elektronik) ; Mikael Johansson (Institutionen för mikroteknologi och nanovetenskap, Fasta tillståndets elektronik)
Proc. 19th Symp. on Microelectronics Technology and Devices Vol. 3 (2004), p. 241.
[Konferensbidrag, refereegranskat]

An overview is given on the use of wafer bonding for formation of Silicon-On-Insulator (SOI) materials for high performance applications. Recent developments in wafer bonding and available techniques for formation of thin semiconductor films is presented. Furthermore, a review is given on results in use of wafer bonding for formation of advanced SOI-materials. Finally, a more detailed discussion is given on the use of wafer bonding for manufacture of SOI-materials intended for high-frequency applications and SOI-materials with films of electrically insulating but highly thermally conductive materials as buried insulators.

Nyckelord: Silicon on insulator technology, Silicon wafers, Silicon on sapphire technology, Thin films, CMOS integrated circuits, Thermal conductivity, Strength of materials, MOSFET devices


In Electrochemical Society Proceedings



Denna post skapades 2007-01-15. Senast ändrad 2015-02-11.
CPL Pubid: 17800

 

Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Fasta tillståndets elektronik (2003-2006)

Ämnesområden

Elektronik

Chalmers infrastruktur