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Hydrophobic low temperature wafer bonding; void formation in the oxide free interface

Petra Amirfeiz (Institutionen för mikroteknologi och nanovetenskap, Fasta tillståndets elektronik) ; Anke Sanz-Velasco (Institutionen för mikroteknologi och nanovetenskap, Fasta tillståndets elektronik) ; Stefan Bengtsson (Institutionen för mikroteknologi och nanovetenskap, Fasta tillståndets elektronik)
Proc. of the 7th Int. Symp. on Semiconductor Wafer Bonding Vol. 19 (2003), p. 267.
[Konferensbidrag, refereegranskat]

The objective is to investigate plasma assisted bonding processes having the potential of forming oxide-free bonded interfaces. Spontaneous low temperature hydrophobic bonding was achieved using a plasma-assisted technique. High surface energy was obtained when bonding two silicon wafers after argon plasma treatment and a subsequent dip in concentrated HF. In contrast hydrogen plasma caused bonding problems while a mix of hydrogen and nitrogen improved the bondability. A particular interest is directed toward the generation of voids as a consequence of storage at room temperature or low temperature annealing. All samples suffer from void generation both after storage at room temperature and after low temperature annealing.

Nyckelord: Silicon wafers, Bonding, Interfaces (materials), Plasma applications, Interfacial energy, Hydrophobicity, Annealing, Hydrofluoric acid


In Electrochemical Society Proceedings



Denna post skapades 2007-01-15. Senast ändrad 2015-02-11.
CPL Pubid: 17798

 

Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Fasta tillståndets elektronik (2003-2006)

Ämnesområden

Elektronik

Chalmers infrastruktur