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Electroluminescence from silicon p-n junctions prepared by wafer bonding

Einar Sveinbjörnsson (Institutionen för fasta tillståndets elektronik) ; Stefan Bengtsson (Institutionen för fasta tillståndets elektronik) ; J. Weber ; N. Keskitalo
Proceedings of the Fourth International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications p. 264. (1998)
[Konferensbidrag, refereegranskat]

We report on electro- and photoluminescence from silicon p-n diodes formed by hydrophobic wafer bonding. Four main spectral features associated with the bonded interface are detected at photon energies between 0.8 and 0.9 eV. Two of these signals are identified as the dislocation-related signals D1 and D2 while two peaks at 0.83 eV and 0.89 eV remain unidentified. However, we observe a signal similar to the 0.83 eV signal in polysilicon and at the junction of a silicon bicrystal

Nyckelord: bicrystals, dislocations, electroluminescence, elemental semiconductors, p-n junctions, photoluminescence, semiconductor diodes, silicon, surface chemistry, wafer bonding



Denna post skapades 2006-12-06. Senast ändrad 2015-02-11.
CPL Pubid: 17793

 

Institutioner (Chalmers)

Institutionen för fasta tillståndets elektronik (1985-1998)

Ämnesområden

Elektronik

Chalmers infrastruktur