CPL - Chalmers Publication Library
| Utbildning | Forskning | Styrkeområden | Om Chalmers | In English In English Ej inloggad.

A silicon-oxide-silicon nanogap device structure

Per Lundgren (Institutionen för mikroelektronik) ; Stefan Bengtsson (Institutionen för mikroelektronik)
Proceedings of the 2002 2nd IEEE Conference on Nanotechnology (Cat. No.02TH8630) p. 201. (2002)
[Konferensbidrag, refereegranskat]

Nanogaps in the range 5-14 nm have been manufactured with a silicon-oxide-silicon structure and the electrical characteristics show low parasitic leakage currents and a high sensitivity to surface treatment

Nyckelord: elemental semiconductors, energy gap, interface states, leakage currents, nanoelectronics, semiconductor-insulator-semiconductor devices, silicon, silicon compounds

Denna post skapades 2006-08-28. Senast ändrad 2015-12-17.
CPL Pubid: 17789


Läs direkt!

Länk till annan sajt (kan kräva inloggning)

Institutioner (Chalmers)

Institutionen för mikroelektronik (1995-2003)



Chalmers infrastruktur