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Optimized cleaning processes for silicon wafer bonding

Karin Ljungberg ; Stefan Bengtsson (Institutionen för fasta tillståndets elektronik)
Proceedings of the Third International Symposium on Ultra Clean Processing of Silicon Surfaces. UCPSS '96 p. 123. (1996)
[Konferensbidrag, refereegranskat]

The use of SPFM (H2SO4-H2O2-HF) at low HF concentrations (10-1000 ppm) has been investigated as a pre-cleaning procedure for silicon direct bonding. This cleaning procedure can be tuned to simultaneously give hydrophilic surface properties, ensuring good bondability, and excellent electric properties, crucial for the application of direct bonding in device applications

Nyckelord: elemental semiconductors, integrated circuit measurement, integrated circuit reliability, integrated circuit testing, integrated circuit yield, optimisation, silicon, surface cleaning, surface contamination, wafer bonding

Denna post skapades 2006-09-19. Senast ändrad 2015-02-11.
CPL Pubid: 17787


Institutioner (Chalmers)

Institutionen för fasta tillståndets elektronik (1985-1998)



Chalmers infrastruktur