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ZrO2 gate dielectrics prepared by e-beam deposition of Zr and YSZ films and post annealing processes

Mikael Johansson (Institutionen för mikroelektronik) ; M. Y. A. Yousif (Institutionen för mikroelektronik) ; Alok Sareen (Institutionen för mikroelektronik) ; Per Lundgren (Institutionen för mikroelektronik) ; Stefan Bengtsson (Institutionen för mikroelektronik) ; Ulf Södervall (Institutionen för mikroelektronik och nanovetenskap)
ESSDERC 2002. Proceedings of the 32nd European Solid-State Device Research Conference p. 419. (2002)
[Konferensbidrag, refereegranskat]

In this paper we present the electrical performance of MOS capacitors with ZrO2 gate dielectric prepared by e-beam evaporation of zirconium and yttrium stabilized zirconia (YSZ) and subsequent thermal treatment. To this stage we have reached an equivalent oxide thickness (EOT) of 1.9 nm. The effect of post-oxidation annealing on Zr incorporation into the Si substrate is investigated. SIMS analysis showed no signs of Zr diffusion in the substrate at temperatures as high as 900°C and that significant diffusion occurs only at 1100°C

Nyckelord: annealing, CMOS integrated circuits, dielectric thin films, diffusion, electron beam deposition, integrated circuit testing, MOS capacitors, oxidation, permittivity, secondary ion mass spectra, zirconium compounds

Also available on CD-ROM in PDF format.

Denna post skapades 2007-01-15. Senast ändrad 2015-12-17.
CPL Pubid: 17785


Institutioner (Chalmers)

Institutionen för mikroelektronik (1995-2003)
Institutionen för mikroelektronik och nanovetenskap (1900-2003)



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