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High frequency losses in transmission lines made on SIMOX, bulk silicon and depleted silicon/silicon structures formed by wafer bonding

Mikael Johansson (Institutionen för mikroelektronik, Fasta tillståndets elektronik) ; Mats Bergh (Institutionen för mikroelektronik, Fasta tillståndets elektronik) ; Stefan Bengtsson (Institutionen för mikroelektronik, Fasta tillståndets elektronik)
1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345) p. 30. (1999)
[Konferensbidrag, refereegranskat]

Wafer bonding and etch-back has been used to manufacture a silicon material intended as substrate for high frequency applications. The space charge region surrounding the bonded silicon/silicon interface depletes the silicon, thereby causing semi-insulating behaviour at high frequencies. The formed material was characterized using measurements on metal transmission lines and the results were compared to similar measurements on SIMOX and bulk silicon wafers

Nyckelord: elemental semiconductors, etching, high-frequency transmission lines, integrated circuit interconnections, integrated circuit measurement, integrated circuit metallisation, interface states, interface structure, microwave integrated circuits, silicon, SIMOX, space charge, wafer bonding

Denna post skapades 2006-09-19. Senast ändrad 2015-02-11.
CPL Pubid: 17784


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Institutioner (Chalmers)

Institutionen för mikroelektronik, Fasta tillståndets elektronik (1997-2003)



Chalmers infrastruktur