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A novel depleted semi-insulating silicon material for high frequency applications

Mikael Johansson (Institutionen för mikroelektronik) ; Stefan Bengtsson (Institutionen för mikroelektronik)
Progress in SOI Structures and Devices Operating at Extreme Conditions. Proceedings of the NATO Advanced Research Workshop p. 333. (2002)
[Konferensbidrag, refereegranskat]

Wafer bonding has been used to manufacture a silicon material intended as substrate for high frequency applications. The space charge regions surrounding the bonded silicon/silicon interface deplete the silicon thereby causing semiinsulating behaviour at high frequencies. The material has been characterized electrically for frequencies up to 40 GHz using metal transmission lines and crosstalk structures on its surface. Measurements on the depleted silicon/silicon structures has been compared to similar measurements on bulk silicon wafers of different resistivities, SIMOX wafers and quartz. The results show that the material has potential to be used at high frequencies

Nyckelord: bonds (chemical), electrical resistivity, elemental semiconductors, interface structure, quartz, semiconductor process modelling, semiconductor thin films, silicon, SIMOX, space charge, surface conductivity, wafer bonding

Denna post skapades 2006-08-28. Senast ändrad 2015-02-11.
CPL Pubid: 17783


Institutioner (Chalmers)

Institutionen för mikroelektronik (1995-2003)



Chalmers infrastruktur